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Updated: Mar 18, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
The unique Raman fingerprint of boron nitride substitution patterns in graphene
Lorenzo Maschio1, Marco Lorenz2, Daniele Pullini3
1Dipartimento di Chimica, Università di Torino, via Giuria 5, I-10125 Torino, Italy. lorenzo.maschio@unito.it and NIS (Nanostructured Interfaces and Surfaces) Centre, Università di Torino, via Giuria 5, I-10125 Torino, Italy.
Abstract:
Boron nitride-substituted graphene (BNsG) two-dimensional structures are new materials of wide technological interest due to the rich variety of electronic structures and properties they can exploit. The ability to accurately characterize them is key to their future success. Here we show, by means of ab initio simulations, that the vibrational Raman spectra of such compounds are extremely sensitive to substitution motifs and concentration, and that each structure has unique and distinct features. This result can be useful as a guide for the optimization of production processes.
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