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3D integrated hybrid silicon laser.

Bowen Song, Cristian Stagarescu, Sasa Ristic

    Optics Express
    |July 14, 2016
    PubMed
    Summary
    This summary is machine-generated.

    Indium phosphide lasers were integrated onto silicon using flip-chip bonding and grating couplers. This advancement enables efficient light coupling for silicon photonic applications.

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    Area of Science:

    • Photonics
    • Materials Science
    • Electrical Engineering

    Background:

    • Silicon photonics offers advantages for integrated circuits.
    • Indium phosphide (InP) is a key material for laser fabrication.
    • Integrating lasers onto silicon platforms is crucial for advanced optical systems.

    Purpose of the Study:

    • To demonstrate the integration of InP lasers onto silicon substrates.
    • To develop a surface-emitting laser architecture for silicon photonics.
    • To evaluate the performance and efficiency of the integrated laser system.

    Main Methods:

    • Flip-chip bonding of InP devices with total internal reflection mirrors onto silicon.
    • Utilizing surface grating couplers for light coupling into silicon waveguides.
    • Forming laser cavities using InP reflective semiconductor optical amplifiers, microring resonators, and distributed Bragg reflectors.

    Main Results:

    • Successful integration of InP lasers on silicon.
    • Demonstration of single-mode continuous wave lasing with a side mode suppression ratio of 30 dB.
    • Coupling up to 2 mW of optical power into silicon waveguides.
    • Thermal simulations indicate low thermal impedance and potential for high efficiency.

    Conclusions:

    • The developed flip-chip bonding technique enables efficient InP laser integration on silicon.
    • The surface-emitting architecture with grating couplers is suitable for silicon photonic circuits.
    • The results show promise for high-performance, efficient silicon-based optical devices.