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Related Experiment Video

Updated: Mar 17, 2026

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Towards High Accuracy Reflectometry for Extreme-Ultraviolet Lithography.

Charles Tarrio1, Steven Grantham1, Matthew B Squires1

  • 1National Institute of Standards and Technology, Gaithersburg, MD, 20899-8410 USA.

Journal of Research of the National Institute of Standards and Technology
|July 15, 2016
PubMed
Summary

Upgrades to the NIST/DARPA Reflectometry Facility enhance extreme ultraviolet (EUV) lithography mirror reflectivity measurements. The facility now achieves 0.1% repeatability and 0.3% absolute uncertainty for EUV optics, crucial for advanced semiconductor manufacturing.

Keywords:
extreme ultravioletlithographymetrologyreflectometrysynchrotron radiation

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Area of Science:

  • Optics and optical engineering
  • Materials science
  • Metrology

Background:

  • Extreme ultraviolet (EUV) lithography demands high reflectivity and precise wavelength control for Mo/Si multilayer mirrors and masks.
  • Current measurement capabilities for reflectivity and wavelength repeatability limit the advancement of EUV lithography technology.
  • The National Institute of Standards and Technology (NIST) and the Defense Advanced Research Projects Agency (DARPA) collaborate on advanced reflectometry for critical applications.

Purpose of the Study:

  • To report on upgrades to the NIST/DARPA Reflectometry Facility to improve measurement precision for EUV optics.
  • To achieve enhanced repeatability and reduced absolute uncertainty in reflectivity measurements critical for EUV lithography.
  • To lay the groundwork for future improvements in wavelength repeatability through advanced monochromator design.

Main Methods:

  • Implementation of two upgrades to the existing NIST/DARPA Reflectometry Facility.
  • Characterization of Mo/Si multilayer mirrors and reflective masks used in EUV lithography.
  • Development and application of advanced metrology techniques for precise optical property determination.

Main Results:

  • Achieved 0.1% repeatability in reflectivity measurements.
  • Attained 0.3% absolute uncertainty in reflectivity measurements.
  • Demonstrated significant improvement in measurement capabilities essential for EUV lithography.

Conclusions:

  • The upgraded NIST/DARPA Reflectometry Facility meets critical precision requirements for EUV lithography.
  • Enhanced reflectivity measurement capabilities support the development of next-generation semiconductor manufacturing technologies.
  • Ongoing research into monochromator stability will further advance wavelength measurement precision for EUV optics.