Related Experiment Video

Updated: Mar 17, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

8.2K

Influence of Gate Dielectric and Its Surface Treatment on Electrical Characteristics of Solution-Processed ZnO

Dong-Seok Song, Jae-Hyun Kim, Ji-Hoon Jung

    Journal of Nanoscience and Nanotechnology
    |July 20, 2016
    PubMed

    More Related Videos

    The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors12:32

    The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

    Published on: May 24, 2020

    9.3K
    Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating10:36

    Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

    Published on: April 12, 2018

    12.1K

    Related Concept Videos

    Characteristics of MOSFET01:17

    Characteristics of MOSFET

    Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
    Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
    1.2K
    MOSFET: Enhancement Mode01:22

    MOSFET: Enhancement Mode

    Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
    In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
    974
    MOS Capacitor01:25

    MOS Capacitor

    A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
    The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
    1.7K
    MOSFET: Depletion Mode01:20

    MOSFET: Depletion Mode

    Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
    The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
    1.0K
    MOSFET01:16

    MOSFET

    The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
    In an n-MOSFET, the structure includes n-type source and drain...
    1.6K
    Metal-Semiconductor Junctions01:24

    Metal-Semiconductor Junctions

    The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
    Schottky Barriers
    Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
    1.3K