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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2
Michal J Mleczko1, Runjie Lily Xu1, Kye Okabe1
1Department of Electrical Engineering, ‡Department of Materials Science and Engineering, §Department of Applied Physics, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
Abstract:
Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically thin limit. Here, we introduce a facile growth mechanism for semimetallic WTe2 crystals and then fabricate few-layer test structures while carefully avoiding degradation from exposure to air. Low-field electrical measurements of 80 nm to 2 μm long devices allow us to separate intrinsic and contact resistance, revealing metallic response in the thinnest encapsulated and stable WTe2 devices studied to date (3-20 layers thick). High-field electrical measurements and electrothermal modeling demonstrate that ultrathin WTe2 can carry remarkably high current density (approaching 50 MA/cm(2), higher than most common interconnect metals) despite a very low thermal conductivity (of the order ∼3 Wm(-1) K(-1)). These results suggest several pathways for air-stable technological viability of this layered semimetal.
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