Related Experiment Video
Updated: Mar 17, 2026

Experimental Methods for Spin- and Angle-Resolved Photoemission Spectroscopy Combined with Polarization-Variable Laser
Published on: June 28, 2018
Zero-bias photocurrent in ferromagnetic topological insulator
N Ogawa1, R Yoshimi2, K Yasuda2
1RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan.
Abstract:
Magnetic interactions in topological insulators cause essential modifications in the originally mass-less surface states. They offer a mass gap at the Dirac point and/or largely deform the energy dispersion, providing a new path towards exotic physics and applications to realize dissipation-less electronics. The nonequilibrium electron dynamics at these modified Dirac states unveil additional functions, such as highly efficient photon to spin-current conversion. Here we demonstrate the generation of large zero-bias photocurrent in magnetic topological insulator thin films on mid-infrared photoexcitation, pointing to the controllable band asymmetry in the momentum space. The photocurrent spectra with a maximal response to the intra-Dirac-band excitations can be a sensitive measure for the correlation between Dirac electrons and magnetic moments.
More Related Videos
05:39Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Ferromagnetism
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Types of Semiconductors
P-N junction