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Si1-x Ge x /Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing
R J H Morris1,2, T P A Hase3, A M Sanchez3
1University of Warwick, Gibbet Hill Road, Coventry, CV4 7AL, UK. r.morris@warwick.ac.uk.
Journal of the American Society for Mass Spectrometry
|July 23, 2016
Summary
Energy sequencing with ultra-low energy secondary ion mass spectrometry (uleSIMS) accurately profiles SiGe/Si interfaces. This method achieves sub-nanometer precision, matching high-resolution imaging techniques for reliable material analysis.
Area of Science:
- Materials Science
- Surface Science
- Analytical Chemistry
Background:
- Accurate interface profiling is crucial for semiconductor materials like Silicon-Germanium (SiGe) alloys.
- Secondary Ion Mass Spectrometry (SIMS) is a powerful tool for depth profiling, but matrix effects can complicate analysis.
- Ultra-low energy SIMS (uleSIMS) offers potential for high-resolution depth profiling.
Purpose of the Study:
- To report the utility of energy sequencing for accurate matrix-level interface profiling using uleSIMS.
- To determine the SiGe/Si interface profile with sub-nanometer precision.
- To validate SIMS results against high-resolution imaging techniques.
Main Methods:
- Utilized normally incident O2(+) ions over an energy range of 0.25-2.5 keV for SIMS analysis.
- Probed the Si0.73Ge0.27/Si interface.
- Employed high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) for correlative imaging.
- Linearized SIMS profiles by accounting for matrix effects on ion yield and erosion rate.
- Developed a simultaneous fitting method for SIMS profiles acquired at different energies.
Main Results:
- Achieved sub-nanometer precision in determining the intrinsic sample profile.
- Demonstrated excellent agreement between the SIMS-derived interface and HAADF-STEM imaging.
- Successfully linearized SIMS profiles by correcting for matrix effects.
Conclusions:
- Energy sequencing in uleSIMS is a valuable technique for accurate interface profiling.
- The developed method overcomes matrix effects, enabling precise depth analysis.
- Corroboration with HAADF-STEM validates the reliability of the uleSIMS approach for SiGe/Si interfaces.
