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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Published on: November 24, 2016

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Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel

H Yu, L Zhang, X H Li

    Journal of Nanoscience and Nanotechnology
    |July 26, 2016
    PubMed

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