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Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during

Masashi Arita1, Yuuki Ohno, Yosuke Murakami

  • 1Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan. arita@nano.ist.hokudai.ac.jp.

Nanoscale
|July 27, 2016
PubMed

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