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    A new NF3/NH3 plasma dry cleaning method effectively controls the interfacial layer thickness in HfO2 gate stacks. This novel technique improves electrical properties without altering chemical composition, offering a better alternative for metal-oxide-semiconductor devices.

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    Area of Science:

    • Materials Science
    • Semiconductor Device Physics
    • Plasma Processing

    Background:

    • Hafnium oxide (HfO2) is a critical gate dielectric material in modern microelectronics.
    • Plasma dry cleaning is essential for preparing gate stacks but can affect material properties.
    • Controlling the interfacial layer (IL) thickness is crucial for device performance.

    Purpose of the Study:

    • To investigate the effects of NF3-only and NF3/NH3 plasma dry cleaning on HfO2 gate stacks.
    • To evaluate the impact of these processes on chemical composition, interfacial layer thickness, and electrical properties.
    • To demonstrate a novel NF3/NH3 dry cleaning technique for controlled IL formation.

    Main Methods:

    • Plasma dry cleaning of HfO2 gate stacks using an indirect down-flow capacitively coupled plasma (CCP) system.
    • X-ray Photoelectron Spectroscopy (XPS) for chemical composition analysis.
    • Transmission Electron Microscopy (TEM) for interfacial layer thickness measurement.
    • Electrical characterization of metal-oxide-semiconductor (MOS) capacitors.

    Main Results:

    • NF3 dry cleaning incorporated fluorine into HfO2 and altered its chemical composition.
    • Plasma dry cleaning increased the interfacial layer (IL) thickness.
    • NF3/NH3 dry cleaning at 150 W significantly suppressed IL growth compared to control samples.
    • NF3/NH3 dry cleaning improved electrical properties, reducing gate leakage currents and equivalent oxide thickness (EOT).

    Conclusions:

    • The NF3/NH3 plasma dry cleaning process offers a method to control HfO2 gate stack IL thickness.
    • This technique avoids significant changes in chemical composition and preserves MOS capacitor characteristics.
    • The novel NF3/NH3 dry cleaning presents a promising approach for advanced semiconductor device fabrication.