Electrical Characteristics of Top-Gated Graphene Field Effect Transistors Fabricated on Stainless Steel (STS) Substrate
Related Experiment Video
Updated: Mar 16, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Abstract:
Top-gated Graphene transistors with Al2O3 gate-dielectric on the flexible stainless steel substrate have been demonstrated. Graphene was synthesized on copper foil using a chemical vapor deposition method and transferred onto the stainless steel substrate by wet transfer technique. The stainless steel substrate was polished by chemical mechanical polishing method and the spin-on-glass layer was coated on the surface to improve the surface roughness. The average surface roughness R(a) was as low as 5.9 nm from the AFM measurement. The measured hole and electron mobilities from the current-voltage characteristics at room temperature were calculated as high as 310 and 45 cm2/Vs, respectively. In addition, the effect of surrounding temperature up to 355 K on the electrical variations was investigated. The mobility was inversely proportional to the temperature with negligible hysteresis where the temperature coefficient was calculated as low as -0.65 %/K.
Related Concept Videos
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Field Effect Transistor
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Characteristics of JFET
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...

