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Updated: Aug 14, 2026

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Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
Published on: July 26, 2016
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Two-Step Growth of Epitaxial InP Layers by Metal Organic Chemical Vapor Deposition
Journal of Nanoscience and Nanotechnology
|August 4, 2016
Abstract:
In this study, we report experimental results on the epitaxial growth of InP layer on GaAs (001) substrate by using MOCVD. We have systematically controlled nucleation steps in order to obtain InP epitaxial layers with high crystallinity quality. The controlling parameters were flow ratio of V/IIIsources and thicknesses of nucleation layer for nucleation steps. We successfully improved the surface roughness and crystallinity of IIP epitaxial layers on GaAs substrates.

