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Updated: Mar 16, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
Real-Time Examination of Atomistic Mechanisms during Shock-Induced Structural Transformation in Silicon
Stefan J Turneaure1, N Sinclair1, Y M Gupta1
1Institute for Shock Physics and Department of Physics, Washington State University, Pullman, Washington 99164-2816, USA.
Abstract:
The experimental determination of atomistic mechanisms linking crystal structures during a compression-driven solid-solid phase transformation is a long-standing and challenging scientific objective. Using new capabilities at the Dynamic Compression Sector at the Advanced Photon Source, the structure of shocked Si at 19 GPa was identified as simple hexagonal, and the lattice orientations between ambient cubic diamond and simple hexagonal structures were related. The approach is general and provides a powerful new method for examining atomistic mechanisms during stress-induced structural changes.

