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Related Experiment Video

Updated: Mar 16, 2026

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
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Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates

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Underlayer Effect on Perpendicular Magnetic Anisotropy in Co20Fe60B20\MgO Films.

P J Chen1, Y L Iunin2, S F Cheng3

  • 1National Institute of Standards of Technology, Gaithersburg, MD, 20899, USA.

IEEE Transactions on Magnetics
|August 9, 2016
PubMed
Summary
This summary is machine-generated.

Researchers explored various underlayers for CoFeB films, discovering that elements with 4d or 5d electrons, such as Hf, Ta, W, Re, Ir, and Pt, effectively induce perpendicular magnetic anisotropy (PMA). This finding advances understanding of PMA in magnetic tunnel junctions.

Keywords:
CoFeBMTJMgOPMAanisotropyunderlayer

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Spintronics

Background:

  • Perpendicular Magnetic Tunneling Junctions (pMTJs) are crucial for advanced magnetic storage devices.
  • The role of underlayers in establishing perpendicular magnetic anisotropy (PMA) in CoFeB films remains incompletely understood.
  • Existing research on pMTJs often focuses on specific underlayer materials like Tantalum (Ta).

Purpose of the Study:

  • To systematically investigate a broad range of elements as underlayers for Co20Fe60B20 films.
  • To identify new underlayer materials capable of inducing or enhancing PMA in CoFeB.
  • To explore the underlying mechanisms responsible for PMA development influenced by different underlayers.

Main Methods:

  • Fabrication of underlayer\Co20Fe60B20\MgO stacks using a diverse set of elements from columns IVA, VA, VIA, VIIA, and VIIIA of the periodic table as underlayers.
  • Characterization of the magnetic properties, specifically focusing on the presence and strength of PMA.
  • Analysis of the electronic structure and interfacial hybridization between the underlayer and CoFeB.

Main Results:

  • Underlayers containing elements with 4d electrons (Zr, Nb, Mo, Pd) and 5d electrons (Hf, Ta, W, Re, Ir, Pt) successfully induced PMA in the MgO-capped Co20Fe60B20 films.
  • Elements from the 3d series and noble metals like Ag and Au did not result in significant PMA.
  • The observed PMA is attributed to the hybridization between the 3d electrons of Co/Fe at the interface and the 4d or 5d electrons of the underlayer elements.

Conclusions:

  • A wide array of underlayer elements, particularly those with 4d and 5d valence electrons, can effectively establish PMA in CoFeB.
  • The findings expand the material choices for fabricating pMTJs with tailored magnetic properties.
  • Interfacial electronic hybridization is confirmed as a key mechanism for inducing PMA in these magnetic heterostructures.