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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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Compensated Ferrimagnetic Tetragonal Heusler Thin Films for Antiferromagnetic Spintronics
Roshnee Sahoo1, Lukas Wollmann1, Susanne Selle2
1Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany.
Advanced Materials (Deerfield Beach, Fla.)
|August 9, 2016
Summary
Fully compensated ferrimagnets offer potential for high-density memory. Researchers achieved this using tetragonal Heusler thin films, demonstrating room temperature exchange bias for advanced memory applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Fully compensated ferrimagnets with tetragonal crystal structures are promising for high-density memory due to large spin-polarization and out-of-plane magnetic anisotropy.
- Developing materials with tunable magnetic properties is crucial for next-generation data storage.
Purpose of the Study:
- To realize tetragonal Heusler thin films in a compensated magnetic state.
- To investigate the potential of these films for magnetic memory applications.
- To achieve room temperature exchange bias in a bilayer system.
Main Methods:
- Thin film deposition of Manganese-Platinum-Gallium (Mn-Pt-Ga) alloys.
- Tetragonal crystal structure formation via controlled substitution.
- Fabrication of bilayer structures using compensated and uncompensated Mn-Pt-Ga layers.
Main Results:
- Tetragonal Heusler thin films with a compensated magnetic state were successfully synthesized by substituting Platinum (Pt) in Mn3-x Ptx Ga.
- A bilayer composed of compensated and uncompensated Mn-Pt-Ga layers exhibited exchange bias.
- This exchange bias effect was demonstrated to persist up to room temperature.
Conclusions:
- The developed Mn-Pt-Ga Heusler thin films are suitable for high-density memory applications.
- The demonstrated room temperature exchange bias in bilayer structures opens avenues for advanced magnetic memory devices.
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