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Published on: October 24, 2017
Highly efficient phosphorescent materials based on Ir(iii) complexes-grafted on a polyhedral oligomeric
Tianzhi Yu1, Zixuan Xu, Wenming Su
1Key Laboratory of Opto-Electronic Technology and Intelligent Control (Ministry of Education), Lanzhou Jiaotong University, Lanzhou 730070, China. yutzh@mail.lzjtu.cn.
Researchers developed novel phosphorescent polyhedral oligomeric silsesquioxane (POSS) materials incorporating iridium(iii) complexes. These materials exhibit reduced self-interactions and concentration quenching, leading to improved performance in light-emitting devices.
Area of Science:
- Materials Science
- Organic Chemistry
- Photochemistry
Background:
- Development of advanced phosphorescent materials is crucial for efficient optoelectronic devices.
- Iridium(iii) complexes are widely studied for their photoluminescent properties.
- Polyhedral oligomeric silsesquioxane (POSS) offers a unique core for creating well-defined nanostructured materials.
Purpose of the Study:
- To synthesize novel phosphorescent polyhedral oligomeric silsesquioxane (POSS) materials by covalently attaching an iridium(iii) complex.
- To investigate the photophysical properties and device performance of these new POSS-based materials.
- To explore the impact of the bulky POSS core on intermolecular interactions and luminescence.
Main Methods:
- Synthesis of a new iridium(iii) complex with coumarin and carbazole-functionalized ligands.
- Covalent attachment of the iridium(iii) complex to a POSS core via hydrosilylation reaction using a platinum catalyst.
- Characterization of the synthesized POSS materials using photoluminescence spectroscopy.
- Fabrication and testing of solution-processed light-emitting devices.
Main Results:
- Successful synthesis of three new phosphorescent POSS materials with good thermal stability and solubility.
- Photoluminescence studies revealed reduced intermolecular interactions and concentration quenching due to the bulky POSS core.
- Light-emitting devices fabricated with these materials achieved a maximum external quantum efficiency (EQE) of 9.77%.
Conclusions:
- The bulky POSS core effectively mitigates aggregation and concentration quenching in iridium(iii) complexes.
- The synthesized phosphorescent POSS materials are promising candidates for solution-processed optoelectronic applications.
- This work demonstrates a viable strategy for designing high-performance phosphorescent organic materials using POSS scaffolds.
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