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Brian E Jackson1, Jordan J Christensen1, Saransh Singh2
11Mechanical Engineering Department,Brigham Young University,Provo,UT 84602,USA.
High-resolution electron backscatter diffraction (HR-EBSD) using dynamically simulated patterns offers greater precision for analyzing lattice distortion in Si/SiGe materials compared to previous methods. This advancement improves strain and tetragonality measurements, especially at low distortion levels.
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