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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces.

E Lesne1, Yu Fu2, S Oyarzun2,3

  • 1Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France.

Nature Materials
|August 30, 2016
PubMed
Summary
This summary is machine-generated.

Researchers achieved highly efficient spin-to-charge conversion using the Rashba effect at an oxide interface. This breakthrough in spintronics utilizes the LaAlO3/SrTiO3 2D electron system for novel device applications.

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Area of Science:

  • Spintronics
  • Condensed Matter Physics
  • Materials Science

Background:

  • Spin-orbit coupling enables charge-to-spin interconversion via spin Hall effect (SHE) and inverse spin Hall effect (ISHE).
  • Current SHE/ISHE efficiencies are limited by bulk properties, rarely exceeding 10%, and do not leverage interfacial effects.

Purpose of the Study:

  • To achieve highly efficient spin-to-charge conversion using an interface-driven spin-orbit coupling mechanism.
  • To explore the potential of the oxide two-dimensional electron system (2DES) for enhanced spintronic functionalities.

Main Methods:

  • Utilized the Rashba effect at the LaAlO3/SrTiO3 interface.
  • Employed spin pumping to inject spin current from a NiFe film into the oxide 2DES.
  • Detected the resulting charge current and analyzed its gate voltage dependence.

Main Results:

  • Demonstrated unprecedented efficiency in spin-to-charge conversion.
  • Observed strong modulation of the charge current by a gate voltage.
  • Correlated the effect's amplitude and gate dependence with the 2DES electronic structure.

Conclusions:

  • Interface-driven Rashba effect in oxide 2DES offers superior spin-to-charge conversion efficiency compared to bulk SHE/ISHE.
  • Long scattering times are crucial for efficient spin-to-charge interconversion.
  • This work paves the way for novel spintronic devices leveraging interfacial phenomena.