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Te-Doped Black Phosphorus Field-Effect Transistors.

Bingchao Yang1, Bensong Wan2,3, Qionghua Zhou4

  • 1State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao, 066004, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)
|September 6, 2016
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Summary

Tellurium doping enhances the electronic properties and stability of 2D black phosphorus devices. This method offers a straightforward way to create air-stable black phosphorus electronics.

Keywords:
2D layered materialsTe-dopingblack phosphorusfield-effect transistors

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) materials offer unique electronic properties.
  • Black phosphorus (BP) is a promising 2D material but suffers from poor ambient stability.
  • Element doping is a key strategy for tuning the properties of 2D materials.

Purpose of the Study:

  • To investigate the effects of Tellurium (Te) doping on black phosphorus.
  • To enhance the transport performance and stability of black phosphorus devices.
  • To develop a facile method for creating air-stable black phosphorus.

Main Methods:

  • Synthesis of Tellurium-doped black phosphorus.
  • Fabrication and characterization of black phosphorus field-effect transistors (FETs).
  • Electrical transport measurements under ambient conditions.

Main Results:

  • Tellurium doping significantly improves the charge carrier mobility in black phosphorus devices.
  • Doped devices exhibit enhanced stability against oxidation and degradation in air.
  • The doping process is compatible with standard fabrication techniques.

Conclusions:

  • Tellurium doping is an effective strategy to overcome the ambient instability of black phosphorus.
  • This approach leads to superior electronic transport properties in 2D devices.
  • Facile synthesis of air-stable black phosphorus is achievable through Te doping.