Related Experiment Video
Updated: Mar 15, 2026
11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
16.2K
Electron beam directed etching of hexagonal boron nitride.
Christopher Elbadawi1, Trong Toan Tran, Miroslav Kolíbal
1School of Physics and Advanced Materials, University of Technology, Sydney, P.O. Box 123, Broadway, New South Wales 2007, Australia. Milos.Toth@uts.edu.au Igor.Aharonovich@uts.edu.au Charlene.Lobo@uts.edu.au.
Nanoscale
|September 8, 2016
Summary
We developed a novel electron beam technique for etching hexagonal boron nitride (hBN). This method allows for precise, damage-free nanoscale patterning of 2D hBN materials for advanced devices.
Area of Science:
- Materials Science
- Nanotechnology
- Photonics
Background:
- Hexagonal boron nitride (hBN) is a 2D van der Waals material with significant potential for photonic and optoelectronic applications due to its wide bandgap and unique optical properties.
- Current limitations in material processing and nano-prototyping techniques hinder the widespread adoption and utilization of hBN in advanced devices.
Purpose of the Study:
- To introduce a high-resolution, single-step electron beam technique for the chemical dry etching of hexagonal boron nitride (hBN).
- To enable facile fabrication of 2D hBN-based heterostructures and devices through advanced patterning capabilities.
Main Methods:
- A novel electron beam technique utilizing H2O as a precursor gas for chemical dry etching of hBN.
- Etching was performed at both room temperature and elevated hBN temperatures.
- The process allows for damage-free, nanoscale, and iterative patterning of both supported and suspended 2D hBN.
Main Results:
- Demonstrated a high-resolution, single-step electron beam etching process for hBN.
- Achieved damage-free nanoscale patterning of 2D hBN materials.
- Successfully etched both supported and suspended hBN samples, showcasing versatility.
Conclusions:
- The developed electron beam technique provides a crucial advancement in processing 2D hBN materials.
- This method facilitates the fabrication of complex hBN-based heterostructures and devices.
- Opens new avenues for the development of next-generation photonic and optoelectronic devices utilizing hBN.
