Related Experiment Video
Updated: Mar 15, 2026

08:12
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
12.8K
Dispersion of nonlinear refractive index in layered WS2 and WSe2 semiconductor films induced by two-photon absorption
Optics Letters
|September 9, 2016
Abstract:
Both the nonlinear absorption and nonlinear refraction properties of WS2 and WSe2 semiconductor films have been characterized by using Z-scan technique with femtosecond pulses at the wavelength of 1040 nm. It is found that these films have two-photon absorption response with the nonlinear absorption coefficient of ∼103 cm GW-1, and a dispersion of nonlinear refractive index in the WS2 films that translated from positive in the monolayer to negative in bulk materials.

