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Transparent conducting oxide induced by liquid electrolyte gating.

Carlos ViolBarbosa1, Julie Karel1, Janos Kiss1

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|September 21, 2016
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Summary

Ionic liquid gating creates a metallic phase in tungsten oxide (WO3) by forming new in-gap states, not altering the bandgap. This method tunes conductivity while maintaining visible transparency for advanced electronic applications.

Keywords:
TCOelectrolyte gatingmetal–insulator transitiontransparent conducting oxide

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Surface Science

Background:

  • Optically transparent conducting materials are crucial for displays, solar cells, and touchscreens.
  • Tin-doped indium oxide (ITO) is the standard, but alternatives are sought.
  • Ionic liquid gating offers a novel method to tune material properties.

Purpose of the Study:

  • To investigate the mechanism behind ionic liquid gating-induced metallicity in WO3.
  • To determine if the bandgap changes or if new electronic states form.
  • To confirm the material's transparency and conductivity tunability.

Main Methods:

  • Hard X-ray photoelectron spectroscopy (HAXPES) to probe electronic structure.
  • Spectroscopic ellipsometry to analyze optical properties.
  • Ionic liquid gating to induce and control the metallic phase.

Main Results:

  • The metallic phase in WO3 arises from new in-gap states, not a bandgap change.
  • These states cause absorption below 1 eV, preserving visible transparency.
  • Gating reversibly alters atomic coordination without significant stoichiometry changes.
  • Conductivity is tuned over orders of magnitude.

Conclusions:

  • Ionic liquid gating creates a metallic, yet transparent, phase in WO3 via in-gap states.
  • This mechanism allows for tunable conductivity and maintains optical transparency.
  • WO3 with ionic liquid gating presents a promising alternative for transparent electronics.