Single nanowire green InGaN/GaN light emitting diodes
Guogang Zhang1, Ziyuan Li, Xiaoming Yuan
1Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.
Fabrication of single nanowire (NW) green Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) light-emitting diodes (LEDs) reduced quantum-confined Stark effects. This strain relaxation in NW LEDs has implications for optoelectronic devices.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Planar Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) light-emitting diodes (LEDs) commonly exhibit quantum-confined Stark effects.
- These effects impact device performance and efficiency in traditional LED structures.
Purpose of the Study:
- To fabricate and investigate single nanowire (NW) green InGaN/GaN LEDs using top-down etching.
- To analyze the strain relaxation mechanism and its effect on electroluminescence (EL) in NW LEDs compared to planar counterparts.
Main Methods:
- Fabrication of single NW InGaN/GaN LEDs via top-down etching.
- Electroluminescence (EL) measurements at varying injection currents.
- Raman scattering analysis to study strain relaxation.
Main Results:
- Single NW LEDs showed reduced quantum-confined Stark effects, indicated by a stable EL peak wavelength with increasing current.
- Raman scattering revealed strain relaxation in NW LEDs.
- A redshift in the EL peak of NW LEDs was observed compared to planar LEDs, attributed to electric field redistribution post-metallization.
Conclusions:
- Top-down etching is a viable method for fabricating single NW InGaN/GaN LEDs with improved characteristics.
- The reduced quantum-confined Stark effect in NW LEDs offers potential for enhanced optoelectronic device performance.
- Further research into metallization effects on cavity modes is warranted for optimizing NW LED design.
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