Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Modeling of Diode Forward Characteristics

Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...

Modeling of Diode Reverse Characteristics

Modeling of Diode Reverse Characteristics

In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

Diode: Forward bias

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Novel test method to measure time-cure superposition shift factors of filled-thermoset under <i>isocure</i> testing conditions.

Journal of materials science·2026

Same author

Enhanced DMA Test Procedure to Measure Viscoelastic Properties of Epoxy-Based Molding Compound: Multiple Oscillatory Strain Amplitudes and Monotonic Loading.

Micromachines·2025

Same author

Implementation and Performance Evaluation of a Bivariate Cut-HDMR Metamodel for Semiconductor Packaging Design Problems with a Large Number of Input Variables.

Materials (Basel, Switzerland)·2021

Same author

Deconvolution of spectral power distribution of high-power laser diode arrays.

Applied optics·2017

Same author

Superlattice-based thin-film thermoelectric modules with high cooling fluxes.

Nature communications·2016

Same author

Non-contact method for characterization of small size thermoelectric modules.

The Review of scientific instruments·2015

Search research articles

Related Experiment Video

Updated: Mar 14, 2026

Subsurface Defect Localization by Structured Heating Using Laser Projected Photothermal Thermography

Subsurface Defect Localization by Structured Heating Using Laser Projected Photothermal Thermography

Published on: May 15, 2017

Method for predicting junction temperature distribution in a high-power laser diode bar.

Dae-Suk Kim, Caleb Holloway, Bongtae Han

|September 24, 2016

Summary

This summary is machine-generated.

This study introduces a hybrid method to predict laser diode (LD) junction temperature distribution. The approach accurately models heat dissipation and cooling for high-power LD bars, crucial for device performance.

More Related Videos

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Non-equilibrium Microwave Plasma for Efficient High Temperature Chemistry

Non-equilibrium Microwave Plasma for Efficient High Temperature Chemistry

Published on: August 1, 2017

Related Experiment Videos

Last Updated: Mar 14, 2026

Subsurface Defect Localization by Structured Heating Using Laser Projected Photothermal Thermography

Subsurface Defect Localization by Structured Heating Using Laser Projected Photothermal Thermography

Published on: May 15, 2017

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Non-equilibrium Microwave Plasma for Efficient High Temperature Chemistry

Non-equilibrium Microwave Plasma for Efficient High Temperature Chemistry

Published on: August 1, 2017

Area of Science:

Optoelectronics
Thermal Management
Numerical Simulation

Background:

High-power laser diodes (LDs) require precise thermal management for optimal performance and longevity.
Accurate prediction of junction temperature distribution is critical for multi-emitter LD bars.

Purpose of the Study:

To propose and validate a hybrid experimental/numerical method for predicting junction temperature distribution in high-power LD bars.
To develop a method for characterizing heat dissipation and cooling efficiency in LD systems.

Main Methods:

A hybrid approach combining experimental measurements and numerical simulations.
Development of a unique experimental setup to measure average junction temperatures.
Inverse determination of the effective heat transfer coefficient using measured data and simulation.
Numerical prediction of junction temperature distribution under high operating currents.

Main Results:

The proposed hybrid method successfully predicts junction temperature distribution in a water-cooled LD bar.
Characterized heat dissipation and effective heat transfer coefficient were obtained.
Results are presented alongside wall-plug efficiency and center wavelength shift.

Conclusions:

The hybrid method offers a reliable approach for thermal analysis of high-power LD bars.
Accurate thermal modeling is essential for optimizing LD performance and efficiency.