Atomically thin quantum light-emitting diodes.
Carmen Palacios-Berraquero1, Matteo Barbone2, Dhiren M Kara1
1Cavendish Laboratory, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE, UK.
Nature Communications
|September 27, 2016
Summary
Researchers demonstrated electrically driven single-photon emission from transition metal dichalcogenides (TMDs). This breakthrough paves the way for advanced quantum photonics devices using these optically active materials.
Area of Science:
- Materials Science
- Quantum Physics
- Optoelectronics
Background:
- Transition metal dichalcogenides (TMDs) are optically active, layered materials with significant potential for optoelectronics and on-chip photonics.
- Localized sites in TMDs are crucial for achieving efficient light emission.
Purpose of the Study:
- To demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide.
- To explore the potential of TMDs as a platform for quantum photonics devices.
Main Methods:
- Fabrication of a light-emitting diode (LED) structure using single-layer graphene, hexagonal boron nitride, and TMD mono- and bi-layers.
- Utilizing photon correlation measurements to verify the single-photon nature of the emission.
Main Results:
- Successful demonstration of electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide.
- Confirmation of spectrally sharp emission characteristic of single-photon sources.
- Validation of the LED structure's efficacy for light emission.
Conclusions:
- The transition metal dichalcogenide family serves as a promising platform for developing hybrid, broadband, and atomically precise quantum photonics devices.
- Electrically driven single-photon emission from TMDs opens new avenues for integrated quantum technologies.


