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Spin Hall magnetoresistance in Co2FeSi/Pt thin films: dependence on Pt thickness and temperature
Xiufeng Huang1, Zhiwen Dai1, Lin Huang2
1College of Science, China Three Gorges of University, Yichang 443002, Hubei, People's Republic of China.
Abstract:
We have investigated the temperature and the Pt layer thickness dependence of the magnetoresistances (MRs) in Co2FeSi/Pt thin films. Based on the field dependent measurements, it can be seen that the spin-current-induced spin Hall magnetoresistance (SMR) plays the dominant role in the MRs in the Co2FeSi/Pt bilayers in the whole temperature range. Meanwhile, a quite small part of anisotropic magnetoresistance (AMR) existed in the MRs. It proved to be originated from magnetic proximity effect (MPE) by measuring the Pt thickness and temperature dependence of the AMR. Moreover, the Co2FeSi layer thickness has much weaker effect on the SMR and AMR compared to the Pt layer thickness. These results indicate that the Co2FeSi/Pt interface is beneficial to be used in the spin-current-induced physical phenomena.

