Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Diagnostic Value of Glycocalyx Shedding in Blood for Differentiating between Parkinson's Disease and Multiple System Atrophy.

Movement disorders : official journal of the Movement Disorder Society·2026

Same author

Rare-Earth Atoms on Nb(110) as a Platform to Engineer Topological Superconductivity.

Nano letters·2026

Same author

Reversible doping and fine-tuning of the Dirac point position in the topological crystalline insulator Pb<sub>1-</sub> Sn <sub></sub> Se <i>via</i> sputtering and annealing process.

Nanoscale advances·2025

Same author

Spin Spiral State at a Ferromagnetic Gd Vacuum Interface.

Physical review letters·2024

Same author

Boosting spatial and energy resolution in STM with a double-functionalized probe.

Science advances·2024

Same author

Diboraperylene Diborinic Acid Self-Assembly on Ag(111)-Kagome Flat Band Localized States Imaged by Scanning Tunneling Microscopy and Spectroscopy.

Angewandte Chemie (International ed. in English)·2024

Search research articles

Related Experiment Video

Updated: Mar 14, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Single Electron Gating of Topological Insulators.

Paolo Sessi¹, Thomas Bathon¹, Konstantin Aleksandrovich Kokh^2,3,4

¹Physikalisches Institut, Experimentelle Physik II, Universität Würzburg Am Hubland, 97074, Würzburg, Germany.

Advanced Materials (Deerfield Beach, Fla.)

|September 29, 2016

Summary

Researchers demonstrate effective gating of topological insulators using molecule coupling. Electric fields dynamically control interface charge states, creating a single-electron transistor-like effect for advanced electronics.

Keywords:

hybrid heterostructures ionization molecules scanning tunneling microscopy topological insulators

More Related Videos

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Related Experiment Videos

Last Updated: Mar 14, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Topological insulators possess unique surface states with potential for novel electronic devices.
Controlling charge states at interfaces is crucial for device functionality and miniaturization.

Purpose of the Study:

To demonstrate effective electrical gating of topological insulators via molecular coupling.
To achieve dynamic control over interface charge states at the single-electron level.

Main Methods:

Coupling organic molecules to the surface of topological insulators.
Applying electric fields to manipulate the interface charge state.
Measuring transconductance to observe bistability.

Main Results:

Achieved effective gating of topological insulators through molecule-surface coupling.
Demonstrated dynamic control of interface charge by adding/removing single electrons.
Observed robust transconductance bistability, mimicking a single-electron transistor.

Conclusions:

Hybrid molecule/topological insulator interfaces are viable functional electronic elements.
This approach pushes the limits of electronic device miniaturization.