Large Planar π-Conjugated Porphyrin for Interfacial Engineering in p-i-n Perovskite Solar Cells

Bobo Li1, Chaoyue Zheng1, Huan Liu2

  • 1Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Centre for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech) , 30 South Puzhu Road, Nanjing 211816, P.R. China.

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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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