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Updated: Mar 14, 2026

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
Ferroelectric Control of Organic/Ferromagnetic Spinterface.
Shiheng Liang1, Hongxin Yang2, Huaiwen Yang1
1Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, BP 239, 54506, Vandœuvre, France.
Researchers developed organic multiferroic tunnel junctions. They demonstrated electrical control over spin polarization injection into organic materials by switching ferroelectric polarization, enabling new functionalities.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Organic Electronics
Background:
- Organic multiferroic tunnel junctions offer potential for novel electronic devices.
- Controlling spin polarization in organic materials is crucial for spintronics.
- Ferroelectric materials can be switched by electric fields, offering tunable properties.
Purpose of the Study:
- To fabricate and characterize organic multiferroic tunnel junctions.
- To investigate the electrical control of spin polarization at an organic-ferroelectric interface.
- To explore the tunability of tunneling magnetoresistance in these devices.
Main Methods:
- Fabrication of La0.6 Sr0.4 MnO3 /poly(vinylidene fluoride) (PVDF)/Co structures.
- Electrical switching of the ferroelectric polarization of the PVDF barrier.
- Measurement of tunneling magnetoresistance (TMR).
- Analysis of spin polarization at the PVDF/Co spinterface.
Main Results:
- Successful fabrication of organic multiferroic tunnel junctions.
- Demonstrated electrical switching of the tunneling magnetoresistance sign by controlling PVDF ferroelectric polarization.
- Showcased active control over the spin polarization of the PVDF/Co spinterface through ferroelectric tuning.
Conclusions:
- Organic multiferroic tunnel junctions provide a platform for electrical control of spin polarization.
- Ferroelectric polarization of PVDF can be used to tune spin injection into organic materials.
- This work introduces new functionalities for organic spintronic devices.
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