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Towards Understanding Early Failures Behavior during Device Burn-In: Broadband RF Monitoring of Atomistic Changes in
Yaw S Obeng1, Chukwudi A Okoro2, Papa K Amoah3
1Engineering Physics Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
ECS Journal of Solid State Science and Technology : JSS
|October 15, 2016
Summary
This study uses dielectric spectroscopy to monitor changes in three dimensional (3D) integrated circuits during burn-in. These electrical changes reveal chemical defects in through silicon vias (TSV) dielectrics, offering insights into device reliability.
Area of Science:
- Materials Science
- Electrical Engineering
- Semiconductor Device Physics
Background:
- Device "burn-in" involves exposing integrated circuits to stress to identify early failures.
- Three dimensional (3D) integrated circuits utilize through silicon vias (TSV) for advanced interconnectivity.
- Understanding physico-chemical changes during burn-in is crucial for device reliability.
Purpose of the Study:
- To investigate the physico-chemical alterations occurring in devices during the burn-in process.
- To explore the utility of low-frequency dielectric spectroscopy in monitoring electrical defects in TSV dielectrics.
- To correlate observed electrical changes with chemical modifications in the dielectric material.
Main Methods:
- Low-frequency dielectric spectroscopy was employed to detect and characterize electrical defects.
- Through silicon vias (TSV) in three dimensional (3D) integrated circuit devices were subjected to fluctuating thermal loads.
- Electrical characteristics of interconnects were monitored during thermal stress.
Main Results:
- Changes in electrical characteristics were observed in TSV dielectrics under thermal loads.
- These electrical changes were directly linked to chemical modifications within the isolation dielectric.
- Dielectric spectroscopy effectively detected and monitored these defect evolution dynamics.
Conclusions:
- The study provides phenomenological insights into the burn-in process by linking electrical changes to dielectric chemistry.
- Inherent "chemical defects" in as-manufactured TSVs may contribute to early reliability failures in 3D devices.
- Low-frequency dielectric spectroscopy is a valuable tool for characterizing and monitoring dielectric integrity in advanced integrated circuits.
