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Updated: Dec 27, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Black GaAs with Sub-Wavelength Nanostructures Fabricated via Lithography-Free Metal-Assisted Chemical Etching
Thomas S Wilhelm1,2, Alex P Kolberg3, Mohadeseh A Baboli1,2
1Microsystem Engineering, Rochester Institute of Technology, Rochester, NY 14623, United States.
Abstract:
A practical nanofabrication process is detailed here for the generation of black GaAs. Discontinuous thin films of Au nanoparticles are electrodeposited onto GaAs substrates to catalyze site-specific etching in a solution of KMnO4 and HF according to the metal-assisted chemical etching mechanism. This provides a solution-based and lithography-free method for fabricating sub-wavelength nanostructure arrays that exhibit solar-weighted reflectance approaching 4 %. This two-step benchtop process can be entirely performed at room-temperature without lithographic patterning or vacuum instrumentation, providing an alternative high-throughput nanotexturing approach for thin-film photovoltaics applications.

