Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films

Our studies have been focused on the synthesis of N→Ga coordinated organogallium sulfides [L¹ Ga(μ-S)]₃ (1) and [L² Ga(μ-S)]₂ (2) containing either N,C,N- or C,N-chelating ligands L¹ or L² (L¹ is {2,6-(Me₂ NCH₂ )₂ C₆ H₃ }^- and L² is {2-(Et₂ NCH₂ )-4,6-tBu₂ -C₆ H₂ }^- ). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N→Ga coordinated organogallium tetrasulfide L¹ Ga(κ² -S₄ ) (3) was prepared and the unprecedented complex [{2-[CH{(CH₂ )₃ CH₃ }(μ-OH)]-6-CH₂ NMe₂ }C₆ H₃ ]GaS (4) was also isolated as the minor by-product of the reaction. Compounds 1-3 were further studied as potential single-source precursors for amorphous GaS thin film deposition by spin-coating.