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PLD prepared bioactive BaTiO3 films on TiNb implants.

Miroslav Jelínek1, Přemysl Vaněk2, Zdeněk Tolde3

  • 1Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic; Czech Technical University in Prague, Faculty of Biomedical Engineering, nam. Sitna 3108, 212 01 Kladno, Czech Republic.

Materials Science & Engineering. C, Materials for Biological Applications
|October 25, 2016
PubMed
Summary
This summary is machine-generated.

Barium titanate (BaTiO3) films were successfully deposited using pulsed laser deposition (PLD). Optimal growth occurred between 600°C-700°C, yielding ferroelectric BTO with controlled crystallite sizes.

Keywords:
BaTiO(3)FerroelectricityImplantsPLDThin filmsTiNb

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Thin Film Technology

Background:

  • Barium titanate (BaTiO3) is a key ferroelectric material with diverse applications.
  • Pulsed laser deposition (PLD) is a versatile technique for thin film fabrication.
  • Controlling BTO film properties is crucial for device performance.

Purpose of the Study:

  • To investigate the effect of deposition conditions on BTO film growth.
  • To achieve perovskite BTO with controlled crystallite size and orientation.
  • To explore substrate and interlayer effects on BTO film quality.

Main Methods:

  • Pulsed laser deposition (PLD) of BaTiO3 on various substrates (TiNb, Pt/TiNb, Si, fused silica).
  • Systematic variation of substrate temperatures during deposition (500°C-700°C+).
  • Post-deposition annealing of amorphous films.
  • Characterization using Raman spectroscopy and electrical measurements.

Main Results:

  • Polycrystalline BTO films with 90-160nm crystallites obtained at 600°C-700°C.
  • Rutile phase formation above 700°C and amorphous films below 500°C.
  • Pt interlayer enabled preferential orientation of BTO on TiNb at high temperatures.
  • Raman spectroscopy and electrical tests confirmed polar ferroelectric behavior.

Conclusions:

  • Substrate temperature is critical for perovskite BTO formation, with an optimal range of 600°C-700°C.
  • Post-deposition annealing can recover perovskite structure from amorphous films.
  • Pt interlayers are beneficial for oriented BTO growth on specific substrates, enhancing ferroelectric properties.