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A Dynamically Reconfigurable Ambipolar Black Phosphorus Memory Device.

He Tian1, Bingchen Deng2, Matthew L Chin3

  • 1Ming Hsieh Department of Electrical Engineering, University of Southern California , 3737 W Way, Los Angeles, California 90089, United States.

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|November 2, 2016
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Summary
This summary is machine-generated.

This study introduces a novel black phosphorus (BP) memory device with reconfigurable and polarity-reversible behavior. This adaptable charge-trap memory offers enhanced versatility for advanced electronics and neuromorphic computing applications.

Keywords:
black phosphorusmultilevel-cellnonvolatile memoryreconfigurabletwo-dimensional materials

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Electronics Engineering

Background:

  • Nonvolatile charge-trap memory is crucial for modern electronics.
  • Conventional devices have fixed carrier polarity, limiting versatility.
  • Emerging applications require dynamically tunable electronic properties.

Purpose of the Study:

  • To demonstrate a black phosphorus (BP) charge-trap memory with reconfigurable and polarity-reversible behavior.
  • To explore the potential of BP for advanced electronic applications like neuromorphic computing.

Main Methods:

  • Fabrication of an ambipolar black phosphorus (BP) charge-trap memory device.
  • Characterization of memory properties under varying electrostatic bias conditions.
  • Investigation of carrier polarity switching and multilevel data storage capabilities.

Main Results:

  • The BP memory device exhibits dynamically tunable memory behavior and polarity-reversible characteristics.
  • The programmed/erased state current ratio is continuously adjustable via back-gate bias.
  • The device demonstrates 2-bit per cell data storage through multilevel memory states for both n-type and p-type conductions.

Conclusions:

  • The demonstrated BP memory device offers adaptable properties for emerging technologies.
  • Its reconfigurable nature is suitable for neuromorphic computing and dynamically reconfigurable circuits.
  • This layered material-based memory showcases multilevel cell storage capabilities.