Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Search research articles

Related Experiment Video

Updated: Mar 12, 2026

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Published on: March 13, 2017

Solution-Processed Vertically Stacked Complementary Organic Circuits with Inkjet-Printed Routing.

Jimin Kwon¹, Sujeong Kyung¹, Sejung Yoon¹

¹Department of Creative IT Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam-Ro Nam-Gu, Pohang Gyeongbuk 790-784 South Korea.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)

|November 5, 2016

Summary

This summary is machine-generated.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Monolithic 3D-Integrated All-Solid Ion-Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi-Timescale Reservoir Computing.

Advanced materials (Deerfield Beach, Fla.)·2026

Same author

3-Layer lung cancer invasion model for evaluating MMP-targeted anti-metastatic therapeutics.

Biomedical materials (Bristol, England)·2026

Same author

Bioprinted human skin equivalent for evaluating non-invasive monopolar radiofrequency treatment: a novel approach.

Lasers in medical science·2026

Same author

Wafer-scale uniform non-ferroelectric κ-phase In<sub>2</sub>Se<sub>3</sub> transistors.

Nature communications·2026

Same author

Inkjet-Printed Cholesteric Liquid Crystal Pixels with Frequency-Addressable Optical Memory for Energy-Efficient Reflective Displays.

ACS applied materials & interfaces·2026

Same author

Functional Nano-to-Microstructures by Jet Printing and Direct Ink Writing.

Chemical reviews·2026

Same journal

Reassessing the Proposed Creatine-PrP Axis in Endometriosis: Methodological and Mechanistic Considerations.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026

Same journal

IL-7R-Enriched Extracellular Vesicles From the Thymus Drive Colitis via Promoting Neutrophil Extracellular Trap Formation.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026

Same journal

Oral Prebiotic Polysaccharide Hydrogels Sustaining Colon Antibody Release Alleviate Inflammatory Bowel Disease.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026

Same journal

Systematic Phosphorus-Driven Structural and Field Engineering of n-a-Si:H for Flexible n-a-Si:H/Te Near-Infrared Photodetectors.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026

Same journal

Chemically Gradient Ordered Nanodomains Enable Large Tensile Ductility in Gigapascal Lightweight Refractory High-Entropy Alloys.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026

Same journal

Single-Molecule Characterization of Bacterial Factor-Dependent Transcription Activation by Rob.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026

See all related articles

Researchers fabricated vertically stacked organic field-effect transistors (OFETs) achieving high static noise margin (SNM). This breakthrough enables advanced complementary integrated circuits with improved density and simpler design.

Area of Science:

Organic electronics
Semiconductor device physics
Materials science

Background:

Vertically stacked organic field-effect transistors (OFETs) offer potential for high-density integrated circuits.
Achieving a high static noise margin (SNM) is crucial for reliable logic operations in complementary circuits.
Current fabrication methods face challenges in optimizing device performance and integration.

Purpose of the Study:

To report the fabrication and characterization of solution-processed vertically stacked complementary organic field-effect transistors (OFETs).
To demonstrate a novel strategy for maximizing the static noise margin (SNM) by matching transistor driving strengths.
To showcase the first examples of universal logic gates fabricated using inkjet-printed routing within this architecture.

Main Methods:

Keywords:

3D integration inkjet‐printing integrated circuits organic field‐effect transistor printed electronics

More Related Videos

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Published on: January 29, 2017

Hybrid Printing for the Fabrication of Smart Sensors

Hybrid Printing for the Fabrication of Smart Sensors

Published on: January 31, 2019

Related Experiment Videos

Last Updated: Mar 12, 2026

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Published on: March 13, 2017

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Published on: January 29, 2017

Hybrid Printing for the Fabrication of Smart Sensors

Hybrid Printing for the Fabrication of Smart Sensors

Published on: January 31, 2019

Fabrication of vertically integrated p-type and n-type organic field-effect transistors (OFETs) with a shared gate.
Independent adjustment of dielectric capacitance for each transistor type to match driving strengths.
Characterization of device performance, focusing on static noise margin (SNM).
Demonstration of universal logic gates using inkjet-printed interconnects.

Main Results:

Successfully fabricated solution-processed vertically stacked complementary organic field-effect transistors (OFETs).
Achieved a high static noise margin (SNM) through optimized driving strength matching.
Demonstrated functional universal logic gates using inkjet-printed routing, showcasing the viability of the proposed structure.

Conclusions:

The developed fabrication process enables high-performance, vertically stacked complementary organic field-effect transistors (OFETs).
The strategy for matching driving strengths effectively enhances the static noise margin (SNM), crucial for robust logic circuits.
This work paves the way for scalable, high-density complementary integrated circuits with simplified fabrication and improved yield.