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  3. Wafer-scale Uniform Non-ferroelectric Κ-phase In2se3 Transistors.
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  3. Wafer-scale Uniform Non-ferroelectric Κ-phase In2se3 Transistors.

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Wafer-scale uniform non-ferroelectric κ-phase In2Se3 transistors.

Jaeyun Lee1, Yongwoo Lee2,3, Haksoon Jung2,3

  • 1Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea.

Nature Communications
|April 30, 2026

View abstract on PubMed

Summary
This summary is machine-generated.

We developed a wafer-scale, non-ferroelectric κ-phase indium selenide (In₂Se₃) film for logic circuits. This scalable 2D semiconductor eliminates hysteresis, enabling high-performance field-effect transistors and complementary inverters for advanced electronics.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Device Physics

Background:

  • Two-dimensional (2D) indium selenide (In₂Se₃) shows promise for processing-in-memory due to high carrier mobility and ferroelectricity.
  • Challenges include the lack of wafer-scale, back-end-of-line (BEOL) compatible growth and polarization-induced hysteresis, hindering logic circuit applications.

Purpose of the Study:

  • To develop a scalable, non-ferroelectric 2D In₂Se₃ material compatible with BEOL processes.
  • To investigate the properties and device performance of the κ-phase In₂Se₃ for logic applications.

Main Methods:

  • Thermal evaporation of non-ferroelectric κ-phase In₂Se₃ films over 4-inch wafers at temperatures below 450°C.
  • Structural characterization to confirm phase, bandgap, and conduction type.
  • Fabrication and testing of field-effect transistors (FETs) and complementary inverters.

    • Main Results:

    • Uniform, wafer-scale κ-In₂Se₃ films were successfully grown with an indirect bandgap of 1.45 eV and n-type conduction.
    • κ-In₂Se₃ FETs exhibited hysteresis-free operation, enhancement-mode behavior, and high field-effect mobility (39.3 cm²/Vs).
    • A complementary inverter demonstrated full-swing operation and high voltage gain when integrated with a p-type FET.

    Conclusions:

    • κ-In₂Se₃ is a promising, scalable 2D semiconductor for BEOL-compatible logic integration.
    • The elimination of hysteresis and high device performance open new avenues for advanced electronic applications.
    • This work establishes a viable platform for next-generation logic circuits using 2D materials.