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Photosensitive and Flexible Organic Field-Effect Transistors Based on Interface Trapping Effect and Their Application
Yingli Chu1, Xiaohan Wu1, Jingjing Lu1
1School of Materials Science and Engineering Tongji University Shanghai 201804 P. R. China.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|November 5, 2016
Summary
Flexible organic phototransistors utilizing polylactide (PLA) exhibit high photosensitivity due to charge trapping. This advancement enables effective imaging applications, showcasing the potential of bio-based materials in electronic devices.
Area of Science:
- Materials Science
- Organic Electronics
- Biomaterials
Background:
- Flexible organic phototransistors (FOTs) are crucial for advanced electronic applications.
- Developing FOTs with high performance and utilizing sustainable materials remains a key challenge.
Purpose of the Study:
- To fabricate and characterize flexible organic phototransistors using polylactide (PLA) as a dielectric material.
- To investigate the impact of PLA's polar groups on device performance, specifically photosensitivity.
Main Methods:
- Fabrication of FOTs with PLA as the dielectric layer.
- Characterization of device performance, including photosensitivity measurements.
- Integration of FOTs into a sensor array for imaging applications.
Main Results:
- The fabricated FOTs demonstrated a high photosensitivity of approximately 10^4.
- The polar groups in the PLA dielectric layer were identified as the cause of the observed charge trapping effect.
- Successful imaging of a star pattern using a sensor array of the developed FOTs.
Conclusions:
- Polylactide (PLA) is a viable and effective polar bio-material for dielectric layers in FOTs.
- The charge trapping effect in PLA significantly enhances phototransistor photosensitivity.
- The developed FOTs show excellent performance and potential for imaging sensor applications.
Keywords:
flexible electronicsinterface trapping effectorganic field‐effect transistorsphotosensitive
