Related Experiment Video
Updated: Jul 31, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Oxidative etching of MoS2/WS2 nanosheets to their QDs by facile UV irradiation
Xiaolong Lu1, Rongguo Wang1, Lifeng Hao1
1Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin, 150080, China. wrg@hit.edu.cn.
Abstract:
Oxidative etching has been proved to be an efficient top-down method to prepare quantum dots (QDs) of layered transition-metal dichalcogenides which possess unique properties and have potential applications in various areas. Here, one facile and green oxidative etching method induced by UV irradiation is reported to prepare the QDs of MoS2/WS2 in aqueous solution, respectively. A prominent morphology change occurred to the nanosheets of MoS2/WS2 after irradiation and finally they were etched to ultrasmall nanoparticles which were proved to be the QDs. Insight into the etching mechanism was discussed in detail and hydroxyl free radicals (˙OH) were conclusively demonstrated to play the main role in etching nanosheets. From another point of view, this work also proves the crucial long-term photo instability of MoS2/WS2 since there are increasing photo-related applications of them and points out an easy way to degrade their nanosheets.
More Related Videos
08:50Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
10:41Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
Published on: May 31, 2018