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Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
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Metal oxide-graphene field-effect transistor: interface trap density extraction model.

Faraz Najam1, Kah Cheong Lau2, Cheng Siong Lim1

  • 1Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia.

Beilstein Journal of Nanotechnology
|November 10, 2016
PubMed
Summary
This summary is machine-generated.

A new model accurately extracts interface trap density in graphene field effect transistors. This method improves surface potential calculations, crucial for precise device performance prediction.

Keywords:
drain current compact modelinterface trap distributionmetal-oxide-graphene field-effect transistor (MOGFET)surface potential

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • Interface trap states significantly degrade graphene field effect transistor performance.
  • Existing analytical methods are insufficient for characterizing trap distributions in metal-oxide-graphene field effect transistors (MOGFETs).

Purpose of the Study:

  • To present a simple, implementable model for extracting interface trap density in MOGFETs.
  • To enable accurate calculation of surface potential, accounting for trap charge effects.

Main Methods:

  • Utilized experimental capacitance-gate voltage (C-V) data from MOGFET devices.
  • Employed fundamental equations describing MOGFET device physics.
  • Developed a model to extract interface trap distribution from C-V characteristics.

Main Results:

  • Successfully extracted interface trap distributions for two experimental MOGFET devices.
  • Calculated device parameters (surface potential, interface trap charge/capacitance) showed excellent agreement with experimental data.
  • The model accurately determined surface potential, including trap charge influence.

Conclusions:

  • The presented model offers a viable method for characterizing interface traps in MOGFETs.
  • Accurate surface potential calculation is vital for reliable drain current modeling, unlike models ignoring trap effects.
  • This approach enhances the predictive accuracy of graphene-based electronic devices.