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Updated: Jul 12, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a
1ICT & Robotics Engineering, Semiconductor Convergence Engineering, AISPC Laboratory and IITC, Hankyong National University, 327 Jungang-ro, Anseong-si 17579, Gyenggi-do, Republic of Korea.
This study investigated monolithic 3D nonvolatile memory with feedback field-effect transistors (M3D-NVM-FBFETs). Thinner interlayer dielectrics enhance electrical coupling but require careful design for reliable memory operation.
Area of Science:
- Semiconductor device physics
- Materials science
Background:
- Monolithic 3D nonvolatile memory (M3D-NVM) offers advanced integration.
- Feedback field-effect transistors (FBFETs) are key components in M3D-NVM-FBFETs.
Purpose of the Study:
- Investigate electrical characteristics of M3D-NVM-FBFETs.
- Analyze the electrical coupling effect in M3D-NVM-FBFETs.
- Evaluate the impact of interlayer dielectric thickness on device performance.
Main Methods:
- Technology computer-aided design (TCAD) simulations.
- Analysis of programming/erasing voltages and memory window.
- Retention simulations for 10-year data storage.
Main Results:
- The M3D-NVM-FBFET demonstrated a memory window of 1.98 V, decreasing to 0.83 V after 10 years.
- Electrical coupling effects were observed and quantified.
- Decreasing interlayer dielectric thickness (T) from 100 to 10 nm significantly increased voltage shifts (0.16-0.87 V for programming, 0.15-0.84 V for erasing).
Conclusions:
- M3D-NVM-FBFETs show promising memory characteristics.
- Electrical coupling is a critical factor, especially with thin interlayer dielectrics (<= 50 nm).
- Careful design is necessary to mitigate coupling effects in advanced M3D-NVM-FBFET circuits.
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