Related Experiment Video
Updated: Aug 27, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
An Investigation of the Effect of the Work-Function Variation of a Monolithic 3D Inverter Stacked with MOSFETs
1ICT & Robotics Engineering, Semiconductor Convergence Engineering, AISPC Laboratory, and IITC, Hankyong National University, 327 Jungang-ro, Anseong-si 17579, Gyeonggi-do, Korea.
Abstract:
The effect of the work-function variation (WFV) of metal-oxide-semiconductor field-effect transistor (MOSFET) gates on a monolithic 3D inverter (M3DINV) structure is investigated in the current paper. The M3DINV has a structure in which MOSFETs are sequentially stacked. The WFV effect of the top- and bottom-tier gates on the M3DINV is investigated using technology computer-aided design (TCAD) and a Monte-Carlo sampling simulation of TCAD. When the interlayer dielectric thickness (T) changes from 5 to 100 nm, electrical parameters, such as the threshold voltage, subthreshold swing, on-current, and off-current of the top-tier N-MOSFET and the parameter changes by the change in gate voltage of the bottom-tier P-MOSFET, are investigated. As T decreases below about 30 nm, the means and standard deviations of the electrical parameters rapidly increase. This means that the coupling and its distribution are relatively large in the regime and thus should be well considered for M3D circuit simulation. In addition, due to the increase in standard deviation, the WFV effect of both the top- and bottom-tier MOSFET gates was observed to be greater than those of only the top-tier MOSFET gates and only the bottom-tier MOSFET gates.
More Related Videos
08:50Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
14:16Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET Amplifiers