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Updated: Aug 30, 2025
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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
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Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor
1ICT & Robotics Engineering, Semiconductor Convergence Engineering, AISPC Laboratory and IITC, Hankyong National University, 327 Jungang-ro, Anseong-si 17579, Gyenggi-do, Korea.
Micromachines
|August 26, 2022
Summary
Investigating the tunneling effect in N-type feedback field-effect transistors (NFBFETs) reveals that band-to-band tunneling (BTBT) significantly increases off-currents. Higher doping concentrations enhance this tunneling effect, impacting device performance.
Area of Science:
- Semiconductor Physics
- Materials Science
- Electrical Engineering
Background:
- N-type feedback field-effect transistors (NFBFETs) are crucial semiconductor devices.
- Understanding tunneling effects is vital for optimizing transistor performance and reducing leakage currents.
Purpose of the Study:
- To investigate the band-to-band tunneling (BTBT) effect in NFBFETs.
- To analyze the impact of doping concentration and gate-source voltage on tunneling current and off-currents.
Main Methods:
- Theoretical investigation of band alignment and tunneling mechanisms in NFBFETs.
- Analysis of the influence of varying doping concentrations (N) in the gated-channel region.
- Examination of the effect of gate-source voltage on tunneling rate and BTBT vanishing point.
Main Results:
- Band-to-band tunneling (BTBT) current increases off-currents by approximately 10^4 times at a doping concentration of 4 × 10^18 cm^-3.
- Increased gate-source voltage reduces the tunneling rate by decreasing the aligned band region.
- Higher doping concentrations (e.g., 6 × 10^18 cm^-3) lead to tunneling in both surface and bulk regions, shortening tunneling length and increasing leakage currents.
Conclusions:
- The tunneling effect in NFBFETs significantly impacts off-currents and leakage.
- Doping concentration is a critical parameter controlling the location and magnitude of BTBT current.
- Device design must consider doping levels to manage tunneling and optimize NFBFET performance.
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