Controllable quantum valley pumping with high current in a silicene junction

We propose an efficient scheme for the generation and control of both pure and fully polarized valley currents in a silicene-based junction, using adiabatic quantum pumping. The pure and fully polarized valley currents are induced using ferromagnetic proximity and the application of a perpendicular electric field. We show that the valley polarized current can easily be switched from valley K to valley [Formula: see text] and vice versa, simply by reversing the direction of the electric field. Thus, the valley current is controllable electrically. Compared to the methods proposed for generation of valley current by quantum pumping in graphene, which are based on inducing strain on its sheet, our method is very simple and can be easily utilized in practical applications. Also, we show that the magnitude of pumped current in a silicene-based junction is roughly one order of magnitude greater than that of graphene. In addition to valley-related currents, our pump scheme can be used on its own to generate pure and fully polarized spin currents. A comparison between weak and strong adiabatic regimes is given, and the effects of some structural parameters that can significantly affect the pumping currents and polarizations are discussed.