Related Experiment Video
Updated: Mar 2, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Generation of large spin and valley currents in a quantum pump based on molybdenum disulfide
H Khani1, M Esmaeilzadeh, F Kanjouri
1Department of Physics, Kharazmi University, 31979-37551, Tehran, Iran. mahdi@iust.ac.ir.
Abstract:
Generation of large currents, versatile functionality, and simple structures are of fundamental importance in the development of adiabatic quantum pump devices with nanoscale dimensions. In the present study, we propose an adiabatic quantum pump with a simple structure based on molybdenum disulfide, MoS2, to generate large spin and valley resolved currents. We show that pure and fully polarized spin and valley currents can be easily generated by employing two potential gates and using an exchange magnetic field. Unlike graphene and silicene, in order to induce a valley resolved current in MoS2, one does not need to induce strain and apply an electric field. The spin and valley resolved currents are completely coupled together, so that the spin up (down) current is exactly equal to the valley K(K') current. Hence, we can detect the valley resolved current by utilizing more straightforward and simple methods used for the detection of spin resolved currents. The other prominent feature of this proposed pump is its large current, which is two and three orders of magnitude larger than the maximum current of similar pump structures based on silicene and graphene, respectively. The results of this study are promising for the fabrication of quantum pumps with large spin and valley resolved currents, which opens up the possibility of further development of spintronics and valleytronics in 2D nanostructures.
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Magnetic Field Of A Current Loop
Magnetic Force Between Two Parallel Currents
The force exerted by the magnetic field due to the first conductor over a finite length of the second conductor is given as the product of the current in the second conductor and the vector product of the length vector along the current element and the field due to the first conductor. According to the...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
Torque On A Current Loop In A Magnetic Field
Consider a rectangular current-carrying loop containing N turns of wire, placed in a uniform magnetic field. The net force on a current-carrying loop...
Force On A Current Loop In A Magnetic Field

