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Thin Film on CMOS Active Pixel Sensor for Space Applications.

Jan Dirk Schulze Spuentrup1, Joachim N Burghartz2, Heinz-Gerd Graf3

  • 1Institut fuer Mikroelektronik Stuttgart, Allmandring 30a, 70569 Stuttgart, Germany. spuentrup@ims-chips.de.

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This study presents a radiation-hardened Active Pixel image Sensor (APS) for star sensors. The sensor utilizes Thin Film on CMOS technology for enhanced performance and durability in space applications.

Keywords:
APSglobal shutterimagerradiation hardnessstar sensor

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Area of Science:

  • Aerospace Engineering
  • Electrical Engineering
  • Materials Science

Background:

  • Star sensors require high-performance image sensors for accurate navigation.
  • Existing sensors face challenges with radiation damage and fill factor limitations.

Purpose of the Study:

  • To develop and analyze a novel Active Pixel image Sensor (APS) for star sensor applications.
  • To enhance radiation hardness and maximize the fill factor of the image sensor.

Main Methods:

  • Design and fabrication of a 664 x 664 element APS using Thin Film on CMOS (TFC) technology.
  • Integration of analog signal processing, full frame synchronous shutter, and random access capabilities.
  • Exploration of a thick vertical diode array for improved radiation tolerance.

Main Results:

  • The developed APS demonstrates integrated analog signal processing and advanced shutter/access features.
  • The TFC technology with a thick vertical diode array shows potential for achieving high radiation hardness.
  • Maximum fill factor is a key design consideration addressed by the vertical diode array.

Conclusions:

  • The presented APS is a promising candidate for next-generation star sensors.
  • Thin Film on CMOS technology offers a viable path towards radiation-hardened imaging solutions for space.
  • Further research can optimize the TFC approach for even greater resilience and efficiency.