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Updated: Mar 11, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with

Lei Guo1, Xuelin Yang1, Anqi Hu1

  • 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.

Scientific Reports
|November 24, 2016
PubMed

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