Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices

Area of Science:

• Condensed Matter Physics
• Materials Science
• Electrical Engineering

Background:

• Electrical control of magnetotransport properties is vital for spintronics device applications.
• Rectification magnetoresistance (RMR) has been previously observed in Ge-based Schottky devices.

Purpose of the Study:

• To develop an innovative technique for electrical control of RMR.
• To tune RMR in a wide range using simultaneous DC and AC currents.
• To separate interface and bulk contributions to magnetotransport properties.

Main Methods:

• Simultaneous application of direct current (DC) and alternating current (AC) to Ge-based Schottky devices.
• Measurement and analysis of magnetotransport properties.
• Utilizing the RMR effect to distinguish between interface and bulk contributions.

Main Results:

• A novel electrical manipulation technique for controlling RMR was successfully developed.
• Remarkable tuning of RMR was achieved over a wide range.
• Effective separation of interface and bulk contributions to magnetotransport properties was demonstrated.

Conclusions:

• The developed electrical manipulation technique offers precise control over RMR in Ge-based devices.
• This method provides a pathway to understand and engineer magnetotransport phenomena in heterojunctions.
• The technique is adaptable to other similar heterojunctions, paving the way for advanced spintronic devices.