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Sb-mediated Ge quantum dots in Ti-oxide-Si diode: negative differential capacitance

Victor-Tapio Rangel-Kuoppa1, Alexander Tonkikh2, Peter Werner3

  • 1Institute of Semiconductor and Solid State Physics, Johannes Kepler Universität, A-4040 Linz, Austria.

Science and Technology of Advanced Materials
|November 24, 2016
PubMed

Keywords:
10.0610.1020.11CVGe quantum dotsGe quantum pyramidsmetal oxide semiconductornegative differential capacitance

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