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Recent progress in GeSi electro-absorption modulators.

Papichaya Chaisakul1, Delphine Marris-Morini1, Mohamed-Said Rouifed1

  • 1Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS UMR 8622, Bât. 220, F-91405 Orsay Cedex, France.

Science and Technology of Advanced Materials
|November 24, 2016
PubMed
Summary
This summary is machine-generated.

Germanium-silicon (GeSi) heterostructures are promising for high-performance optical modulators. GeSi enables efficient modulation via Franz-Keldysh and quantum-confined Stark effects for optical interconnects.

Keywords:
Electro-absorptionFranz–Keldysh effectGeSiMultiple quantum wellsOptical modulatorQuantum-confined Stark effect

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Area of Science:

  • Optoelectronics and Photonics
  • Materials Science

Background:

  • Germanium-silicon (GeSi) heterostructures are emerging as key components for advanced optical modulators.
  • Their application in short-distance optical interconnects is driven by the need for high-performance modulation.

Approach:

  • This review explores the integration of Germanium (Ge) into Silicon (Si) to leverage strong electro-absorption mechanisms.
  • It examines bulk and quantum well structures operating at telecommunication wavelengths.

Key Points:

  • The Franz-Keldysh effect and quantum-confined Stark effect are utilized for efficient optical modulation in GeSi.
  • GeSi heterostructures offer a pathway to high-performance electro-absorption modulators.

Conclusions:

  • The current state of GeSi electro-absorption modulator development is discussed, highlighting ongoing challenges.
  • Feasible future research directions and prospects for this technology are presented.