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Recent progress in photoactive organic field-effect transistors.

Yutaka Wakayama1, Ryoma Hayakawa1, Hoon-Seok Seo1

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Science and Technology of Advanced Materials
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Summary

This review covers advancements in photoactive organic field-effect transistors (OFETs), detailing improvements in light-emitting (LE) and light-receiving (LR) OFET device structures and functionalities.

Keywords:
Light-emitting transistorOptical memoryOrganic field-effect transistorPhotochromismPhototransistor

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Area of Science:

  • Organic electronics
  • Semiconductor devices
  • Photonics

Background:

  • Photoactive organic field-effect transistors (OFETs) are crucial for optoelectronic applications.
  • Recent advancements have focused on enhancing device performance and exploring new functionalities.
  • Understanding the evolution of device structures is key to future developments.

Approach:

  • This review categorizes photoactive OFETs into light-emitting (LE) and light-receiving (LR) types.
  • It examines the evolution of device structures for LE-OFETs, from single-layer unipolar to multi-layer ambipolar transistors.
  • Various LR-OFET functionalities, including phototransistors, optical memories, and photochromic transistors, are discussed.

Key Points:

  • LE-OFET performance has significantly improved with advancements in device architectures over the past decade.
  • LR-OFETs are classified by function: phototransistors, non-volatile optical memories, and photochromism-based transistors.
  • Diverse device configurations, such as thin-film, single-crystalline, nanowire, multi-layer, and vertical transistors, are presented.

Conclusions:

  • The review highlights the progress in photoactive OFETs, emphasizing the impact of structural evolution on device performance.
  • It underscores the versatility of LR-OFETs and the potential of novel device configurations.
  • Future research directions in photoactive OFETs are implied through the discussion of various device concepts.